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FDMS8622

N-Channel MOSFET

FDMS8622 Features

* Shielded Gate MOSFET Technology

* Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A

* Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability in a widely used surface mount package

FDMS8622 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Applications
* POE Protection Switch
* DC-DC Switch Top Bottom Pin .

FDMS8622 Datasheet (571.86 KB)

Preview of FDMS8622 PDF

Datasheet Details

Part number:

FDMS8622

Manufacturer:

Fairchild Semiconductor

File Size:

571.86 KB

Description:

N-channel mosfet.

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TAGS

FDMS8622 N-Channel MOSFET Fairchild Semiconductor

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