FDMS8622 N-Channel MOSFET

Fairchild Semiconductor

Description

FDMS8622 N-Channel Shielded Gate PowerTrench® MOSFET August 2018 FDMS8622 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 16.5 A, 56 m .
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMS8622
Manufacturer: Fairchild Semiconductor
File Size: 571.86 KB
Datasheet: FDMS8622_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A
* Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used surface mount package

Applications

* POE Protection Switch
* DC-DC Switch Top Bottom Pin 1 SS D S S G S D Power 56 D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -P

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FDMS8622 N-Channel MOSFET Fairchild Semiconductor

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