FDMS8622 Datasheet (Fairchild Semiconductor)

FDMS8622, N-Channel MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for rDS(on), switching performance and ruggedness.

Applications * POE Protection Switch * DC-DC Switch Top Bottom Pin

FDMS8622 Features

* Shielded Gate MOSFET Technology

* Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A

* Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability in a widely used surface mount package