FDMS8622 Datasheet - Fairchild Semiconductor

FDMS8622 N-Channel MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Applications * POE Protection Switch * DC-DC Switch Top Bottom Pin .

FDMS8622 Features

* Shielded Gate MOSFET Technology

* Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A

* Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability in a widely used surface mount package

FDMS8622_FairchildSemiconductor.pdf