FDMS86201 Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FDMS86201 General Description

* Shielded Gate MOSFET Technology * Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A * Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A * Advanced Package and Silicon combination for low rDS(on) and high efficiency * MSL1 robust package design * 100% U.

FDMS86201 Datasheet (363.23 KB)

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FDMS86201

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Fairchild Semiconductor

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363.23 KB

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N-channel mosfet.
FDMS86201 N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86201 N-Channel Shielded Gate PowerTrench® MOSFET 120 V, 49 A, 11.5 mΩ Featu.

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FDMS86201 General Description

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