* General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A
* Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* MSL1 robust package de
FDMS86201 Datasheet (363.23 KB)
FDMS86201
Fairchild Semiconductor
363.23 KB
N-channel mosfet.
FDMS86201 N-Channel Shielded Gate PowerTrench® MOSFET
October 2014
FDMS86201
N-Channel Shielded Gate PowerTrench® MOSFET
120 V, 49 A, 11.5 mΩ
Featu.
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