FDMS86105 - N-Channel MOSFET
* Shielded Gate MOSFET Technology * Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A * Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A * Advanced package and silicon combination for low rDS(on) and high efficiency * MSL1 robust package design * 100% UIL teste
