FDMS86101A - N-Channel MOSFET
* Shielded Gate MOSFET Technology * Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A * Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A * Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semicond
