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FDMS86540 N-Channel MOSFET

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Description

FDMS86540 N-Channel PowerTrench® MOSFET FDMS86540 N-Channel PowerTrench® MOSFET 60 V, 129 A, 3.4 mΩ .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using e.

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Features

* Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 20 A
* Max rDS(on) = 4.1 mΩ at VGS = 8 V, ID = 18.5 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* Next generation enhanced body diode technology, engineered for soft recovery
* MSL

Applications

* Primary Switch in isolated DC-DC
* Synchronous Rectifier
* Load Switch Top Bottom Pin 1 S S D S S G S D Power 56 D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Sou

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