FDMS86500DC Datasheet (ON Semiconductor)

FDMS86500DC, N-Channel MOSFET

This N *Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process.

Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction *to *Ambie

FDMS86500DC Features

* DUAL COOL® Top Side Cooling DFN8 Package

* Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 29 A

* Max rDS(on) = 3.3 mW at VGS = 8 V, ID = 24 A

* High Performance Technology for Extremely Low rDS(on)

* 100% UIL Tested

* RoHS Compliant Applications