FDMS86500DC

N-Channel MOSFET

ON Semiconductor

FDMS86500DC Features

* DUAL COOL® Top Side Cooling DFN8 Package

* Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 29 A

* Max rDS(on) = 3.3 mW at VGS = 8 V, ID = 24 A

* High Performance Technology for Extremely Low rDS(on)

* 100% UIL Tested

* RoHS Compliant Applications

FDMS86500DC General Description

This N

*Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process. Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction

*to

*Ambie.

FDMS86500DC Datasheet (439.54 KB)