FDMS86500L

N-Channel MOSFET

ON Semiconductor

FDMS86500L Features

* Max rDS(on) = 2.5 mW at VGS = 10 V, ID = 25 A

* Max rDS(on) = 3.7 mW at VGS = 4.5 V, ID = 20 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next generation enhanced body diode technology, engineered for soft recovery

* MSL

FDMS86500L General Description

This N

*Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switc.

FDMS86500L Datasheet (525.56 KB)