FDMS86500L - N-Channel MOSFET

ON Semiconductor

FDMS86500L Datasheet Preview — Preview of FDMS86500L PDF

Datasheet Details

Part number	FDMS86500L
Manufacturer	ON Semiconductor ↗
File Size	525.56 KB
Description	N-Channel MOSFET
Datasheet	FDMS86500L-ONSemiconductor.pdf

FDMS86500L Product details

Description

This N Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Features

Max rDS(on) = 2.5 mW at VGS = 10 V, ID = 25 A.
Max rDS(on) = 3.7 mW at VGS = 4.5 V, ID = 20 A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
Next generation enhanced body diode technology, engineered for soft recovery.
MSL1 robust package design.
100% UIL tested.
RoHS Compliant.

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Published: Dec 20, 2023 |