FDMS86500L N-Channel MOSFET

ON Semiconductor

Description

FDMS86500L MOSFET, N‐Channel, POWERTRENCH) 60 V, 158 A, 2.5 mW General .
This N. Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters.

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Datasheet Specifications

Part number: FDMS86500L
Manufacturer: ON Semiconductor ↗
File Size: 525.56 KB
Datasheet: FDMS86500L-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max rDS(on) = 2.5 mW at VGS = 10 V, ID = 25 A
* Max rDS(on) = 3.7 mW at VGS = 4.5 V, ID = 20 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* Next generation enhanced body diode technology, engineered for soft recovery
* MSL

Applications

* Primary Switch in Isolated DC
* DC
* Synchronous Rectifier
* Load Switch MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current:
* Continuous TC = 25°C (

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FDMS86500L N-Channel MOSFET ON Semiconductor

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