FDN342P mosfet equivalent, p-channel mosfet.
-2 A, -20 V. RDS(ON) = 0.08 Ω @ VGS = -4.5 V RDS(ON) = 0.13 Ω @ VGS = -2.5 V. Rugged gate rating (±12V). High performance trench technology for extremely low RDS(.
for a wide range of gate drive voltages (2.5V - 12V).
Features
-2 A, -20 V. RDS(ON) = 0.08 Ω @ VGS = -4.5 V RDS.
This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V - 12V).
Featur.
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