FDN304P - P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FDN304P
Manufacturer	Fairchild Semiconductor
File Size	152.74 KB
Description	P-Channel MOSFET
Datasheet	FDN304P_FairchildSemiconductor.pdf

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Battery management Load switch Battery protection

2.4 A,.
20 V. RDS(ON) = 52 mΩ @ VGS =.
4.5 V RDS(ON) = 70 mΩ @ VGS =.
2.5 V RDS(ON) = 100 mΩ @ VGS =.
1.8 V.
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D D S SuperSOTTM-3 G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Dr.

📁 FDN304P Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Mar 30, 2005 |