FDN304PZ
Fairchild Semiconductor
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P-channel mosfet. This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery pow
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FDN304P - P-Channel MOSFET
(Fairchild Semiconductor)
FDN304P
January 2001
FDN304P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s.
FDN304P - P-Channel MOSFET
(Kexin)
SMD Type
P-Channel MOSFET FDN304P (KDN304P)
MOSFET
■ Features
● VDS (V) =-20V ● ID =-2.4A (VGS =-4.5V) ● RDS(ON) < 52mΩ (VGS =-4.5V) ● RDS(ON) < 70.
FDN304P - P-Channel MOSFET
(ON Semiconductor)
MOSFET – P-Channel 1.8 V Specified POWERTRENCH)
FDN304P
General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced
low voltage P.
FDN304PZ - P-Channel MOSFET
(ON Semiconductor)
MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN304PZ
General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced
low volta.
FDN302P - P-Channel MOSFET
(Fairchild Semiconductor)
FDN302P
October 2000
FDN302P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged gat.
FDN302P - P-Channel MOSFET
(ON Semiconductor)
MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN302P
General Description This P−Channel 2.5 V specified MOSFET uses a rugged gate
version of ons.
FDN306P - P-Channel MOSFET
(Fairchild Semiconductor)
FDN306P
December 2001
FDN306P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s.
FDN306P - P-Channel MOSFET
(ON Semiconductor)
MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN306P
General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced
low voltag.
FDN308P - P-Channel MOSFET
(Fairchild Semiconductor)
FDN308P
February 2001
FDN308P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged ga.
FDN308P - P-Channel MOSFET
(ON Semiconductor)
MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN308P
General Description This P−Channel 2.5 V specified MOSFET uses a rugged gate
version of ons.