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FDN304P - P-Channel MOSFET

Datasheet Summary

Description

This P

low voltage POWERTRENCH process.

It has been optimized for battery power management applications.

Features

  • 2.4 A,.
  • 20 V.
  • RDS(ON) = 52 mW @ VGS =.
  • 4.5 V.
  • RDS(ON) = 70 mW @ VGS =.
  • 2.5 V.
  • RDS(ON) = 100 mW @ VGS =.
  • 1.8 V.
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SUPERSOTt.
  • 23 provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT23 in the same Footprint.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Comp.

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Datasheet Details

Part number FDN304P
Manufacturer ON Semiconductor
File Size 277.95 KB
Description P-Channel MOSFET
Datasheet download datasheet FDN304P Datasheet
Additional preview pages of the FDN304P datasheet.

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Full PDF Text Transcription

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MOSFET – P-Channel 1.8 V Specified POWERTRENCH) FDN304P General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features • −2.4 A, −20 V ♦ RDS(ON) = 52 mW @ VGS = −4.5 V ♦ RDS(ON) = 70 mW @ VGS = −2.5 V ♦ RDS(ON) = 100 mW @ VGS = −1.8 V • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(ON) • SUPERSOTt−23 provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT23 in the same Footprint • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Battery Management • Load Switch • Battery Protection DATA SHEET www.onsemi.com SOT−23/SUPERSOT−23, 3 LEAD, 1.4x2.
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