FDN306P Datasheet - ON Semiconductor

P-Channel MOSFET

* 2.6 A,

* 12 V RDS(on) = 40 mW @ VGS =

* 4.5 V RDS(on) = 50 mW @ VGS =

* 2.5 V RDS(on) = 80 mW @ VGS =

* 1.8 V

* Fast Switching Speed

* High Performance Trench Technology for Extremely Low RDS(on)

* SUPERSOTt

* 3 Provides Lo

FDN306P

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P-channel mosfet.

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FDN306P P-Channel MOSFET ON Semiconductor

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