FDN306P P-Channel MOSFET

ON Semiconductor

Description

MOSFET * P-Channel, 1.8 V Specified, POWERTRENCH) FDN306P General .
This P. Channel 1.

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Datasheet Specifications

Part number: FDN306P
Manufacturer: ON Semiconductor ↗
File Size: 286.25 KB
Datasheet: FDN306P-ONSemiconductor.pdf
Description: P-Channel MOSFET

Features

* 2.6 A,
* 12 V RDS(on) = 40 mW @ VGS =
* 4.5 V RDS(on) = 50 mW @ VGS =
* 2.5 V RDS(on) = 80 mW @ VGS =
* 1.8 V
* Fast Switching Speed
* High Performance Trench Technology for Extremely Low RDS(on)
* SUPERSOTt
* 3 Provides Lo

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FDN306P P-Channel MOSFET ON Semiconductor

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