Datasheet Details
| Part number | FDP047N08 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 608.44 KB |
| Description | N-Channel MOSFET |
| Download | FDP047N08 Download (PDF) |
|
|
| Part number | FDP047N08 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 608.44 KB |
| Description | N-Channel MOSFET |
| Download | FDP047N08 Download (PDF) |
|
|
|
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol Parameter FDP047N08 VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 1) (Note 2) (Note 3) 75 ±20 164* 116* 656 670 6.0 268 1.79 TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds -55 to +175 300 *Calculated continuous current based on maximum allowable junction temperature.
FDP047N08 — N-Channel PowerTrench® MOSFET FDP047N08 N-Channel PowerTrench® MOSFET 75 V, 164 A, 4.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FDP047N08 | N-Channel MOSFET | INCHANGE |
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