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FDP047N08 - N-Channel MOSFET

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification for ATX / Server / Telecom PSU Batte

Features

  • RDS(on) = 3.8 mΩ (Typ. ) @ VGS = 10 V, ID = 80 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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Datasheet Details

Part number FDP047N08
Manufacturer Fairchild Semiconductor
File Size 608.44 KB
Description N-Channel MOSFET
Datasheet download datasheet FDP047N08 Datasheet
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FDP047N08 — N-Channel PowerTrench® MOSFET FDP047N08 N-Channel PowerTrench® MOSFET 75 V, 164 A, 4.7 mΩ November 2013 Features • RDS(on) = 3.8 mΩ (Typ.) @ VGS = 10 V, ID = 80 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
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