Datasheet Summary
October 2001
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
- - 10 A,
- 20 V. RDS(ON) = 11 mΩ RDS(ON) = 14 mΩ RDS(ON) = 20 mΩ
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability @ VGS =
- 4.5 V @ VGS =
- 2.5 V @VGS =
- 1.8 V
Applications
- Power management
- Load switch
- Battery protection
5 6 4 3 2 1
SuperSOT -8
7...