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FDR844P - P-Channel MOSFET

General Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management applications.

Key Features

  • 10 A,.
  • 20 V. RDS(ON) = 11 mΩ RDS(ON) = 14 mΩ RDS(ON) = 20 mΩ.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability @ VGS =.
  • 4.5 V @ VGS =.
  • 2.5 V @VGS =.
  • 1.8 V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDR844P October 2001 FDR844P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –10 A, –20 V. RDS(ON) = 11 mΩ RDS(ON) = 14 mΩ RDS(ON) = 20 mΩ • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability @ VGS = –4.5 V @ VGS = –2.5 V @VGS = –1.