FDR844P Overview
Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Key Features
- 10 A, –20 V. RDS(ON) = 11 mΩ RDS(ON) = 14 mΩ RDS(ON) = 20 mΩ
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability @ VGS = –4.5 V @ VGS = –2.5 V @VGS = –1.8 V
