FDS5670 mosfet equivalent, n-channel mosfet.
10 A, 60 V. RDS(ON) = 0.014 Ω @ VGS = 10 V RDS(ON) = 0.017 Ω @ VGS = 6 V.
Low gate charge. Fast switching speed. High performance trench technology for extrem.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOS.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 250.84KB)