dual n-channel logic level pwm optimized powertrench mosfet.
* 8 A, 20 V. RDS(ON) = 17 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 2.5 V RDS(ON) = 30 mΩ @ VGS = 1.8 V
* Low gate charge (17 nC)
* High performance trench te.
where low in-line power loss and fast switching are required.
Features
* 8 A, 20 V. RDS(ON) = 17 mΩ @ VGS = 4.5 V R.
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are wel.
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