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FDS6898AZ Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

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Description

FDS6898AZ October 2001 FDS6898AZ Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET General .
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to min.

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Datasheet Specifications

Part number
FDS6898AZ
Manufacturer
Fairchild Semiconductor
File Size
77.73 KB
Datasheet
FDS6898AZ_FairchildSemiconductor.pdf
Description
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

Features

* 9.4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V
* Low gate charge (16 nC typical)
* ESD protection diode (note 3)
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability D2 D D2 D

FDS6898AZ Distributors

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Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDS6898AZ-like datasheet