FDS6961A mosfet equivalent, dual n-channel mosfet.
3.5 A, 30 V. RDS(ON) = 0.090 Ω @ VGS = 10 V RDS(ON) = 0.140 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (2.1nC typical). High performance trench technology for.
where low in-line power loss and fast switching are required.
SOT-23
SuperSOTTM -6
SuperSOTTM -8
SO-8
SOT-223
SOIC.
Features
3.5 A, 30 V. RDS(ON) = 0.090 Ω @ VGS = 10 V RDS(ON) = 0.140 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Th.
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