FDS6910 Datasheet - ON Semiconductor

Dual N-Channel MOSFET

FDS6910 Features

* 7.5 A, 30 V. RDS(ON) = 13 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V

* Fast switching speed

* Low gate charge

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability DD1 DD1 DD2 DD2 SO-8 Pin 1 S

FDS6910 General Description

These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications.

FDS6910 Datasheet (172.90 KB)