FDS6900AS - Dual N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number: FDS6900AS
Manufacturer: ON Semiconductor ↗
File Size: 315.10 KB
Datasheet: FDS6900AS-ONSemiconductor.pdf
Description: Dual N-Channel MOSFET

FDS6900AS Product details

Description

The FDS6900AS is designed to replace two single SO 8 MOSFETs and Schottky diode in synchronous dc dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. channel, logic level,

Features

Q2: Optimized to Minimize Conduction Losses Includes SyncFET Schottky Body Diode, 8.2 A, 30 V.
RDS(on) = 22 mW at VGS = 10 V.
RDS(on) = 28 mW at VGS = 4.5 V.
Q1: Optimized for Low Switching Losses Low Gate Charge (11 nC typical), 6.9 A, 30 V.
RDS(on) = 27 mW at VGS = 10 V.
RDS(on) = 34 mW at VGS = 4.5 V.
100% RG (Gate Resistance) Tested.
These Devices are Pb.
Free and are RoHS Compliant Specifications.

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Published: Mar 10, 2020 |