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FDS6900AS Datasheet, Mosfet, ON Semiconductor

✔ FDS6900AS Features

Q2: Optimized to Minimize Conduction Losses Includes SyncFET Schottky Body Diode, 8.2 A, 30 V
RDS(on) = 22 mW at VGS = 10 V
RDS(on) = 28 mW at VGS = 4.5 V
Q1: Opt

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Part number:

FDS6900AS

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ON Semiconductor ↗

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Description:

Dual n-channel mosfet. The FDS6900AS is designed to replace two single SO*8 MOSFETs and Schottky diode in synchronous dc*dc power supplies that provide vari

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MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

FDS6900AS

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FDS6900AS Dual N-Channel MOSFET ON Semiconductor