FDS6911 Datasheet - Fairchild Semiconductor

FDS6911 MOSFET

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered appli.

FDS6911 Features

* rDS(on) = 13 mΩ @ VGS = 10 V rDS(on) = 17 mΩ @ VGS = 4.5 V

* Fast switching speed

* Low gate charge

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability DD2 DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G G1 S

FDS6911 Datasheet (212.03 KB)