FDS6900AS-G Datasheet - ON Semiconductor

Dual N-Channel MOSFET

FDS6900AS-G Features

* Q2: Optimized to Minimize Conduction Losses Includes SyncFET Schottky Body Diode, 8.2 A, 30 V

* RDS(on) = 22 mW at VGS = 10 V

* RDS(on) = 28 mW at VGS = 4.5 V

* Q1: Optimized for Low Switching Losses Low Gate Charge (11 nC typical), 6.9 A, 30 V

* RDS(on) = 2

FDS6900AS-G General Description

The FDS6900AS is designed to replace two single SO *8 MOSFETs and Schottky diode in synchronous dc *dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30 V, N *channel, log.

FDS6900AS-G Datasheet (315.10 KB)