FDS6900AS-G Datasheet, Mosfet, ON Semiconductor

✔ FDS6900AS-G Features

Q2: Optimized to Minimize Conduction Losses Includes SyncFET Schottky Body Diode, 8.2 A, 30 V
RDS(on) = 22 mW at VGS = 10 V
RDS(on) = 28 mW at VGS = 4.5 V
Q1: Opt

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FDS6900AS-G

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Dual n-channel mosfet. The FDS6900AS is designed to replace two single SO*8 MOSFETs and Schottky diode in synchronous dc*dc power supplies that provide vari

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FDS6900AS-G Dual N-Channel MOSFET ON Semiconductor