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FDS6961A Dual N-Channel MOSFET

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Description

April 1999 FDS6961A Dual N-Channel Logic Level PowerTrenchTM MOSFET General .
Features 3.

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Datasheet Specifications

Part number
FDS6961A
Manufacturer
Fairchild Semiconductor
File Size
241.11 KB
Datasheet
FDS6961A_FairchildSemiconductor.pdf
Description
Dual N-Channel MOSFET

Features

* 3.5 A, 30 V. RDS(ON) = 0.090 Ω @ VGS = 10 V RDS(ON) = 0.140 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. These N-Channel Logic Level MOSFETs are produced using Fairch

Applications

* where low in-line power loss and fast switching are required. SOT-23 SuperSOTTM -6 SuperSOTTM -8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 S FD 1A 6 69 S2 G2 5 6 7 4 3 2 1 SO-8 pin 1 S1 G1 8 Absolute Maximum Ratings Symbol Parameter TA = 25oC unless other wise noted Ratings Units VDSS VGSS

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