FDS6912A Datasheet - ON Semiconductor

FDS6912A Dual N-Channel MOSFET

These N *Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applic.

FDS6912A Features

* 6.0 A, 30 V RDS(ON) = 28 mW @ VGS = 10 V RDS(ON) = 35 mW @ VGS = 4.5 V

* Fast Switching Speed

* Low Gate Charge

* High Performance Trench Technology for Extremely Low RDS(ON)

* High Power and Current Handling Capability

* This Device is Pb

* Fr

FDS6912A-ONSemiconductor.pdf