FDS6930A Datasheet - ON Semiconductor

Dual N-Channel MOSFET

FDS6930A Features

* 5.5 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (typical 5 nC). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 D2 D2 D1 D1 F6D9S30A S

FDS6930A General Description

These N-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications.

FDS6930A Datasheet (345.89 KB)