FDS6961A Datasheet (ON Semiconductor)

FDS6961A, Dual N-Channel MOSFET

These N-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications

FDS6961A Features

* 3.5 A, 30 V. RDS(ON) = 0.090 Ω @ VGS = 10 V RDS(ON) = 0.140 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 D2 D2 D1 D1 F6D9S61A S