FDS6975 Datasheet (PDF) Download
Fairchild Semiconductor
FDS6975

Description

These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • RDS(ON) = 0.032 Ω @ VGS = -10 V, RDS(ON) = 0.045 Ω @ VGS = -4.5 V
  • Low gate charge (14.5nC typical)
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability