Description
These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- -6 A, -30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V, RDS(ON) = 0.045 Ω @ VGS = -4.5 V. Low gate charge (14.5nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D2 D2 D1 D1
S FD 75 69
S2 G2 G1
5 6 7 8
4 3 2 1
SO-8
pin 1
S1
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless otherwise noted
Ratings Units
VDSS VGSS ID PD
Drain-Source Voltage Gate-Source Voltage D.
FDS6975_FairchildSemiconductor.pdf
