Description
Advanced P Channel MOSFET combined with Advanced SO8 FLMP package providing a device with extremely low thermal impedance and improved electrical performance.
Features
- 16 A,.
- 30 V. RDS(ON) = 7.5 mΩ @ VGS =.
- 10 V RDS(ON) = 11.5 mΩ @ VGS =.
- 4.5 V.
- ESD protection diode (note 3).
- ESD rating: 4kV.
- High performance trench technology for extremely low RDS(ON).
- FLMP SO-8 package for enhanced thermal performance in industry-standard package size
NC D NC D NC D NC D
FLMP SO-8
D
Bottom Side Drain Contact
5 6
4 3 2 1
Pin 1SO-
G G S S S S S S
TA=25oC unless otherwise noted
7 8
Absolute.
FDS7079ZN3 Datasheet
