FDS7079ZN3
Description
Advanced P Channel MOSFET bined with Advanced SO8 FLMP package providing a device with extremely low thermal impedance and improved electrical performance.
Key Features
- 16 A, -30 V. RDS(ON) = 7.5 mΩ @ VGS = -10 V RDS(ON) = 11.5 mΩ @ VGS = - 4.5 V
- ESD protection diode (note
- ESD rating: 4kV
- High performance trench technology for extremely low RDS(ON)
