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FDS8813NZ Key Features

  • Max rDS(on) = 4.5mΩ at VGS = 10V, ID = 18.5A
  • Max rDS(on) = 6.0mΩ at VGS = 4.5V, ID =16A
  • HBM ESD protection level of 5.6KV typical (note 3)
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • RoHS pliant

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FDS8813NZ Description

„ Max rDS(on) = 4.5mΩ at VGS = 10V, ID = 18.5A „ Max rDS(on) = 6.0mΩ at VGS = 4.5V, ID =16A „ HBM ESD protection level of 5.6KV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the...