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FDY4001CZ Datasheet, Fairchild Semiconductor

FDY4001CZ Datasheet, Fairchild Semiconductor

FDY4001CZ

datasheet Download (Size : 391.97KB)

FDY4001CZ Datasheet

FDY4001CZ mosfet

complementary n & p-channel powertrench mosfet.

FDY4001CZ

datasheet Download (Size : 391.97KB)

FDY4001CZ Datasheet

FDY4001CZ Features and benefits

FDY4001CZ Features and benefits

Q1: N-Channel
* Max rDS(on) = 5Ω at VGS = 4.5V, ID = 200mA
* Max rDS(on) = 7Ω at VGS = 2.5V, ID = 175mA
* Max rDS(on) = 9Ω at VGS = 1.8V, ID = 150mA Q2: P-Cha.

FDY4001CZ Application

FDY4001CZ Application


* Level shifting
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
* Max rDS.

FDY4001CZ Description

FDY4001CZ Description

This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS=2.5V and specify the rDS(ON) @ VGS = 1.8V. Applications
* Level shifting
* Power Supply Co.

Image gallery

FDY4001CZ Page 1 FDY4001CZ Page 2 FDY4001CZ Page 3

TAGS

FDY4001CZ
Complementary
P-Channel
PowerTrench
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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