FDY4001CZ Overview
Description
This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS=2.5V and specify the rDS(ON) @ VGS = 1.8V.
Key Features
- Max rDS(on) = 5Ω at VGS = 4.5V, ID = 200mA
- Max rDS(on) = 7Ω at VGS = 2.5V, ID = 175mA
- Max rDS(on) = 9Ω at VGS = 1.8V, ID = 150mA Q2: P-Channel tm
