Click to expand full text
FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET
August 2006
FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET
Features
Q1: N-Channel Max rDS(on) = 5Ω at VGS = 4.5V, ID = 200mA Max rDS(on) = 7Ω at VGS = 2.5V, ID = 175mA Max rDS(on) = 9Ω at VGS = 1.8V, ID = 150mA Q2: P-Channel
tm
General Description
This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS=2.5V and specify the rDS(ON) @ VGS = 1.8V.
Applications
Level shifting Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
Max rDS(on) = 8Ω at VGS = -4.5V, ID = -150mA Max rDS(on) = 12Ω at VGS = -2.5V, ID = -125mA Max rDS(on) = 15Ω at VGS = -1.
FDY4001CZ Datasheet
