FDY4001CZ Datasheet | Fairchild Semiconductor

Features Q1: N-Channel - Max r DS(on) = 5Ω at VGS = 4.5V, ID = 200m A - Max r DS(on) = 7Ω at VGS = 2.5V, ID = 175m A - Max r DS(on) = 9Ω at VGS = 1.8V, ID = 150m A Q2: P-Channel tm General Description This plementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the r DS(ON) @ VGS=2.5V and specify the r DS(ON) @ VGS = 1.8V. Applications - Level shifting - Power Supply Converter Circuits - Load/Power Switching Cell Phones, Pagers - Max r DS(on) = 8Ω at VGS = -4.5V, ID = -150m A - Max r DS(on) = 12Ω at VGS = -2.5V, ID = -125m A - Max r DS(on) = 15Ω at VGS = -1.8V, ID = -100m A - ESD protection diode (note 3) - Ro HS pliant 6 5 4 .. S2 4 D2 G2 5 G1 1 2 3 D1 S1 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation (Steady State) Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Q1 20 ±12 200 1000 625 446 -55 to 150 Q2 -20 ±8 -150 -1000 Units V V m A m W °C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 200 280 °C/W Package Marking and Ordering Information Device Marking F Device FDY4001CZ Package SC89-6 Reel Size 7” Tape Width 8mm Quantity 3000units ©2006 Fairchild Semiconductor Corporation FDY4001CZ Rev. B .fairchildsemi. FDY4001CZ plementary N & P-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unlessotherwise...