FDY4001CZ Datasheet | Fairchild Semiconductor

FDY4001CZ plementary N & P-Channel PowerTrench® MOSFET August 2006 FDY4001CZ plementary N & P-Channel PowerTrench® MOSFET Features Q1: N-Channel - Max rDS(on) = 5Ω at VGS = 4.5V, ID = 200mA - Max rDS(on) = 7Ω at VGS = 2.5V, ID = 175mA - Max rDS(on) = 9Ω at VGS = 1.8V, ID = 150mA Q2: P-Channel tm General Description This plementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS=2.5V and specify the rDS(ON) @ VGS = 1.8V. Applications - Level shifting - Power Supply Converter Circuits - Load/Power Switching Cell Phones, Pagers - Max rDS(on) = 8Ω at VGS = -4.5V, ID = -150mA - Max rDS(on) = 12Ω...