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FGH60N60SMD Key Features

  • Maximum Junction Temperature: TJ = 175oC
  • Positive Temperaure Co-efficient for easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A
  • High Input Impedance
  • Fast Switching: EOFF = 7.5 uJ/A
  • Tightened Parameter Distribution
  • RoHS pliant

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FGH60N60SMD Description

Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, tele, ESS and PFC applications where low conduction and switching losses are essential. E C G COLLECTOR (FLANGE) Ratings Symbol VCES VGES IC ICM (1) IF IFM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Transient...