Stop Datasheet | Pinout, Features, Price Comparison & PDF

Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

SGA45T60SMD 45A 600V Field Stop Trench IGBT SGA45T60SMD 45A 600V Field Stop Trench IGBT Features • Field Stop Trench Technology • Typical VCE(sat) =

Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

TGPF30N43P Features: • 430V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th

Silan Microelectronics SGT15T60SD1T/F/S_Datasheet 15A, 600V FIELD STOP IGBT DESCRIPTION C 2 The SGT15T60SD1T/F/S field stop III IGBT features lo

Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operatio

Features  Max Junction Temperature 175°C  High breakdown voltage up to 650V for improved reliability  Short Circuit Rated  Very Low Saturation Vol

MBF15T65PEH 650V FieldStop Trench IGBT Datasheet MBF15T65PEH 650V Field Stop IGBT General Description Features This IGBT is produced using advance

Silan Microelectronics SGT60U65FD1PN(PT)(P7)_Datasheet 60A, 650V FIELD STOP IGBT DESCRIPTION The SGT60U65FD1PN(PT)(P7) field stop IGBT adopts Silan F

CI15T60 15A600V Field Stop Trench IGBT ■ Features • Positive temperature Co-efficient for easy parallel operation. • Short collector time-5us. • High

FGA60N65SMD — 650 V, 60 A Field Stop IGBT October 2013 FGA60N65SMD 650 V, 60 A Field Stop IGBT Features • Maximum Junction Temperature : TJ = • High

www.DataSheet.co.kr FGH60N60SFD 600V, 60A Field Stop IGBT August 2008 FGH60N60SFD 600V, 60A Field Stop IGBT Features • High current capability • Lo

Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

FGH40N60SFD — 600 V, 40 A Field Stop IGBT March 2015 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Vo

STGWA50IH65DF Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package Datasheet - production data Features

FGH60N60SMD — 600 V, 60 A Field Stop IGBT November 2013 FGH60N60SMD 600 V, 60 A Field Stop IGBT Features • Maximum Junction Temperature: TJ = 175oC

Product data sheet Characteristics Complementary Height Width Depth Terminals description ISO n°1 Product weight Resistance to high pressure washer Co