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* 28A, 150V, RDS(on) = 0.09Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche .

such as audio amplifiers, high efficiency switching for DC/DC converters, DC motor control, and uninterrupted power supp.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

FQB200N04

FQB20N06

FQB20N06L

FQB22P10

FQB22P10TM-F085

FQB22P10TM_F085

FQB24N08

FQB25N33

FQB25N33TM-F085

FQB25N33TM_F085

FQB27N25

FQB27N25TM-F085

FQB27N25TM_F085