FQB4P40 datasheet, mosfet equivalent, Fairchild Semiconductor

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FQB4P40 Features and benefits

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* -3.5A, -400V, RDS(on) = 3.1Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tes.

FQB4P40 Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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