FQB9P25 Datasheet - Fairchild Semiconductor

250V P-Channel MOSFET

FQB9P25 Features

* -9.4 A, -250 V, RDS(on) = 620 mΩ (Max.) @ VGS = -10 V, ID = -4.7 A

* Low Gate Charge (Typ. 29 nC)

* Low Crss (Typ. 27 pF)

* 100% Avalanche Tested G S D D2-PAK S G D Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR d

FQB9P25 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in th.

FQB9P25 Datasheet (775.93 KB)

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Datasheet Details

Part number:

FQB9P25

Manufacturer:

Fairchild Semiconductor

File Size:

775.93 KB

Description:

250v p-channel mosfet.

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FQB9P25 250V P-Channel MOSFET Fairchild Semiconductor

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FQB9P25 Features

FQB9P25 General Description

Datasheet Details

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