FQB9N08 80V N-Channel MOSFET

Fairchild Semiconductor

Description

FQB9N08 / FQI9N08 December 2000 QFET FQB9N08 / FQI9N08 80V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQB9N08
Manufacturer: Fairchild Semiconductor
File Size: 547.11 KB
Datasheet: FQB9N08_FairchildSemiconductor.pdf
Description: 80V N-Channel MOSFET

Features

* 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 13 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

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FQB9N08 80V N-Channel MOSFET Fairchild Semiconductor

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