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FQB9N50C

N-Channel MOSFET

FQB9N50C Features

* 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A

* Low Gate Charge (Typ. 28 nC)

* Low Crss (Typ. 24 pF)

* 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar strip

FQB9N50C General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQB9N50C Datasheet (498.07 KB)

Preview of FQB9N50C PDF

Datasheet Details

Part number:

FQB9N50C

Manufacturer:

Fairchild Semiconductor

File Size:

498.07 KB

Description:

N-channel mosfet.

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FQB9N50C N-Channel MOSFET Fairchild Semiconductor

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