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FQB9N50CF

N-Channel MOSFET

FQB9N50CF Features

* 9A, 500V, RDS(on) = 0.85 Ω @VGS = 10 V

* Low gate charge ( typical 28nC)

* Low Crss ( typical 24pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors

FQB9N50CF General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB9N50CF Datasheet (773.51 KB)

Preview of FQB9N50CF PDF

Datasheet Details

Part number:

FQB9N50CF

Manufacturer:

Fairchild Semiconductor

File Size:

773.51 KB

Description:

N-channel mosfet.

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FQB9N50CF N-Channel MOSFET Fairchild Semiconductor

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