FQNL1N50B mosfet equivalent, 500v n-channel mosfet.
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* 0.27A, 500V, RDS(on) = 9.0Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 3.0 pF) Fast switching Improved dv/dt capabilit.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
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