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*
*
*
* 0.35A, 500V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 4.0 pF) Fast switching Improved dv/dt capabilit.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQNL1N50B

FQN1N50C

FQN1N60C

FQ08E

FQ1216ME

FQ1216MEMK5

FQA020ADC-007-M

FQA020ADC-007-S

FQA020ADC-N07-S

FQA10N60C

FQA10N80

FQA10N80C

FQA10N80C-F109