FQP50N06L mosfet equivalent, 60v logic n-channel mosfet.
* 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V, ID = 26.2 A
* Low Gate Charge (Typ. 24.5 nC)
* Low Crss (Typ. 90 pF)
* 100% Avalanche Tested
* 17.
November 2013
Features
* 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V, ID = 26.2 A
* Low Gate Charge (Typ.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
Image gallery
TAGS
Download (Size : 703.66KB)