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*
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* 2.8A, 60V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 15 pF) Fast switching Improved dv/dt capability .

such as DC/DC converters, high efficiency switching for power management in portable and battery operated products. TM .

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQT13N06L

FQT1N60C

FQT1N80

FQT1N80TF

FQT2P25

FQT3P20

FQT4N20

FQT4N20L

FQT4N25

FQT4N25TF

FQT5N20

FQT5P10

FQT7N10