900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Fairchild Semiconductor Electronic Components Datasheet

IRF550 Datasheet

Advanced Power MOSFET

No Preview Available !

Advanced Power MOSFET
IRF550A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 ΟC Operating Temperature
Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
Lower RDS(ON) : 0.032 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
O2
O1
O1
O3
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
Thermal Resistance
Symbol
R θJC
R θCS
R θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BVDSS = 100 V
RDS(on) = 0.04
ID = 40 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
100
40
28.3
160
+_ 20
640
40
16.7
6.5
167
1.11
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ ΟC
ΟC
Typ.
--
0.5
--
Max.
0.9
--
62.5
Units
ΟC /W
Rev. B
©1999 Fairchild Semiconductor Corporation


Fairchild Semiconductor Electronic Components Datasheet

IRF550 Datasheet

Advanced Power MOSFET

No Preview Available !

IRF550A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ΟC unless otherwise specified)
Symbol
BVDSS
BV/ TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage 100 -- -- V VGS=0V,ID=250 µA
Breakdown Voltage Temp. Coeff. -- 0.11 -- V/ ΟC ID=250µA See Fig 7
Gate Threshold Voltage
2.0 -- 4.0 V VDS=5V,ID=250 µA
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
-- -- 100 nA VGS=20V
-- -- -100
VGS=-20V
-- -- 10
VDS=100V
Drain-to-Source Leakage Current -- -- 100 µ A VDS=80V,TC=150ΟC
Static Drain-Source
On-State Resistance
-- -- 0.04 VGS=10V,ID=20A
O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 27.44 -- VDS=40V,ID=20A
O4
-- 1750 2270
-- 420 485 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5
-- 185 215
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 17 50
-- 20 50
VDD=50V,ID=40A,
-- 80 160 ns RG=6.2
See Fig 13
-- 45 100
O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 75 97
-- 13.2 --
-- 34.8 --
VDS=80V,VGS=10V,
nC ID=40A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 40
Integral reverse pn-diode
A
-- 160
in the MOSFET
O4 -- -- 1.6 V TJ=25ΟC,IS=40A,VGS=0V
-- 135 --
-- 0.65 --
ns TJ=25ΟC ,IF=40A
µC diF/dt=100A/ µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=0.6mH, IAS=40A, VDD=25V, RG=27, Starting TJ =25oC
O3 ISD <_ 40A, di/dt <_ 470A/µs, VDD<_ BVDSS , Starting TJ =25oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature


Part Number IRF550
Description Advanced Power MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
PDF Download

IRF550 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 IRF550 Advanced Power MOSFET
Fairchild Semiconductor
2 IRF550A Advanced Power MOSFET
Fairchild Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy