SI4435DY Key Features
- 8.8 A, -30 V
- Low gate charge (17nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
| Manufacturer | Part Number | Description |
|---|---|---|
Kexin Semiconductor |
SI4435DY | P-Channel MOSFET |
onsemi |
SI4435DY | P-Channel MOSFET |
International Rectifier |
SI4435DY | Power MOSFET |
Vishay |
Si4435DY | 30V P-Channel MOSFET |
| UMW UMW |
SI4435DY | -30V P-Channel MOSFET |