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FPD10000V Datasheet 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS

Manufacturer: Filtronic

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Datasheet Details

Part number FPD10000V
Manufacturer Filtronic
File Size 244.64 KB
Description 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS
Download FPD10000V Download (PDF)

General Description

AND APPLICATIONS DIE SIZE (µm): 3750 x 750 DIE THICKNESS: 50µm BONDING PADS (µm): >70 x 60 SEE BONDING DIAGRAM BELOW • The FPD10000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for WiMAX (WMAN) IEEE 802.16 power amplifiers.

The device can be biased from Class C (IDQ < 200 mA), to Class A (IDQ = 1.0 – 1.5 A) to deliver optimal linear power over the desired output power range.

The FPD10000V is also available in packaged form.

Overview

PRELIMINARY • FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS PERFORMANCE (3.5 GHz) (802.16-2004 WiMAX Modulation) ♦ 30 dBm Output Power, < 2.5% EVM ♦ 9.5 dB Power Gain ♦ Class AB Efficiency 10% (10V / 1A IDQ) GATE DRAIN ♦ Class B Efficiency 18% (8V / 300 mA IDQ) BOND PAD BOND PAD ♦ 39 dBm CW Output Power (16X) (16X) ♦ > 48 dBm 3rd Order Intercept Point ♦ Plated Source Vias – No Source wirebonds needed ♦ 2.5 and 3.

Key Features

  • Source thru-vias. 16 bonds each side, Gate and Drain. ¾ User must ensure that the die attach material is uniform and free of voiding underneath the die to ensure proper thermal heatsinking. A useful guideline is a 0.001.
  • 0.002 in. (0.025.
  • 0.050 mm) fillet of die attach material all around the periphery of the die.
  • All information and specifications are subject to change without notice. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:/www. filtronic. co. uk/semis Rev.

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