* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Cla
MD7P19130HSR3 Datasheet (530.11 KB)
MD7P19130HSR3
Freescale Semiconductor
530.11 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 0, 5/2008 www.DataSheet4U.com RF Power Field Effect Transistors N - Channel.
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