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MRF5S19060MBR1 - RF Power Field Effect Transistors

Freescale Semiconductor (now NXP Semiconductors)

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MRF5S19060MBR1 rf power field effect transistors by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF5S19060MBR1
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	518.21 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF5S19060MBR1 Datasheet

Overview

Freescale Semiconductor Technical Data Replaced by MRF5S19060NR1/NBR1.

There are no form, fit or function changes with this part replacement.

Key Features

Spacing Figure 8. Pulse CW Output Power versus Input Power 40 35 30 25 20 15 10 5 0 1 TC =.
30_C ηD VDD = 28 Vdc, IDQ = 750 mA 25_C f1 = 1960 MHz, f2 = 1962.5 MHz 85_C 2.
Carrier N.
CDMA, 2.5 MHz Carrier 85_C IM3 Spacing, 1.2288 MHz Channel 25_C Bandwidth, PAR = 9.8 dB.
30_C @ 0.01% Probability (CCDF) ACPR 85_C 25_C.
30_C Gps.
30_C 25_C 85_C.
10.
20 IM3, (dBc), ACPR (dBc).
30.
.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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