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MBM29DL16xTE - 16M (2M X 8/1M X 16) BIT Dual Operation

Description

The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each.

The MBM29DL16XTE/BE are offered in a 48-pin TSOP(I) and 48-ball FBGA Package.

These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply.

Features

  • Dual Operation.
  • 0.23 µm Process Technology.
  • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program.
  • Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued) s.

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Datasheet preview – MBM29DL16xTE

Datasheet Details

Part number MBM29DL16xTE
Manufacturer Fujitsu Media Devices
File Size 1.06 MB
Description 16M (2M X 8/1M X 16) BIT Dual Operation
Datasheet download datasheet MBM29DL16xTE Datasheet
Additional preview pages of the MBM29DL16xTE datasheet.

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Full PDF Text Transcription

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTE/BE -70/90/12 s FEATURES Dual Operation • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued) s PRODUCT LINE UP Part No. VCC = 3.3 V Ordering Part No. VCC = 3.0 V Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) +0.3 V –0.3 V +0.6 V –0.
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