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MBM29DL16xBE - 16M (2M X 8/1M X 16) BIT Dual Operation

Download the MBM29DL16xBE datasheet PDF. This datasheet also covers the MBM29DL16xTE variant, as both devices belong to the same 16m (2m x 8/1m x 16) bit dual operation family and are provided as variant models within a single manufacturer datasheet.

General Description

The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each.

The MBM29DL16XTE/BE are offered in a 48-pin TSOP(I) and 48-ball FBGA Package.

These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply.

Key Features

  • Dual Operation.
  • 0.23 µm Process Technology.
  • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program.
  • Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued) s.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29DL16xTE_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for MBM29DL16xBE (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MBM29DL16xBE. For precise diagrams, and layout, please refer to the original PDF.

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTE/BE -70/90/12 s FEATURES Dual Operation • 0.23 µm Process Technology...

View more extracted text
TE/BE -70/90/12 s FEATURES Dual Operation • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued) s PRODUCT LINE UP Part No. VCC = 3.3 V Ordering Part No. VCC = 3.0 V Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) +0.3

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