Production specification
Small Signal MOSFET Transistor
FEATURES
Low on-resistance.
Low gate threshold voltge.
Low input capacitance.
Fast switching speed.
Low input/output leakage.
Pb
Lead-free
2N7002T
APPLICATIONS
N-channel enhancement mode effect transistor.
Switching application.
ORDERING INFORMATION
Type No.
Marking
2N7002T
72
SOT-523
Package Code
SOT-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
VDGR
VGSS
ID
PD
RθJA
Drain-Source voltage
60
Drain-Gate voltage(RGS≤1MΩ)
Gate -Source voltage - continuous
-Non Repetitive (tp<50μs)
Maximum Drain current -continuous
-Pulsed
Power Dissipation
60
±20
±40
115
800
150
Thermal resistance,Junction-to-Ambient 833
TJ, Tstg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mW
℃/W
℃
H016
Rev.A
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