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GME

2N7002T Datasheet Preview

2N7002T Datasheet

Small Signal MOSFET Transistor

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Production specification
Small Signal MOSFET Transistor
FEATURES
Low on-resistance.
Low gate threshold voltge.
Low input capacitance.
Fast switching speed.
Low input/output leakage.
Pb
Lead-free
2N7002T
APPLICATIONS
N-channel enhancement mode effect transistor.
Switching application.
ORDERING INFORMATION
Type No.
Marking
2N7002T
72
SOT-523
Package Code
SOT-523
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VDSS
VDGR
VGSS
ID
PD
RθJA
Drain-Source voltage
60
Drain-Gate voltage(RGS≤1MΩ)
Gate -Source voltage - continuous
-Non Repetitive (tp<50μs)
Maximum Drain current -continuous
-Pulsed
Power Dissipation
60
±20
±40
115
800
150
Thermal resistance,Junction-to-Ambient 833
TJ, Tstg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mW
/W
H016
Rev.A
www.gmesemi.com
1




GME

2N7002T Datasheet Preview

2N7002T Datasheet

Small Signal MOSFET Transistor

No Preview Available !

Production specification
Small Signal MOSFET Transistor
2N7002T
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=10μA
60
V
Gate Threshold Voltage
VGS(th) VDS=VGS, ID=250μA
1
2
Gate-body Leakage
IGSS
VDS=0V, VGS=20V
VDS=0V, VGS=-20V
10
nA
-10
Zero Gate Voltage Drain Current IDSS
VDS=60V, VGS=0V
VDS=60V,VGS=0V,Tj=125
1
μA
500
On-state Drain Current
ID(On)
VGS=10V, VDS=7.5V
0.5 1.0
A
Forward transconductance
gFS VDS=10V,ID=200mA
80
mS
Static drain-Source on-resistance RDS(ON) VGS=5.0V,ID=50mA
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-On Delay Time
Turn-Off Delay Time
CISS
COSS
CRSS
tD(ON)
tD(OFF)
VDS=25V,VGS=0V,f=1.0MHz
VDD=30V, ID=0.2A,
RL=150Ω, VGS=10V,
RGEN= 25Ω
2 7.5 Ω
22 50
11 25 pF
25
7.0 20 ns
11 20 ns
H016
Rev.A
www.gmesemi.com
2


Part Number 2N7002T
Description Small Signal MOSFET Transistor
Maker GME
Total Page 4 Pages
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